View AOD4140_4622995.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AOD4140 TM N-Channel SDMOS POWER Transistor
General Description
The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free*
Features
VDS (V) = 25V ID = 43A RDS(ON) <7m RDS(ON) <14m (V GS = 10V) (V GS = 10V) (V GS = 4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
TO-252 D-PAK
Bottom View
D
G S G S G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Avalanche Current
C C C C
Maximum 25 20 43 34 120 120 35 61 50 25 2.5 1.6 -55 to 175
Units V V
VGS TC=25C TC=100C ID IDM ISM IAR EAR PD PDSM TJ, TSTG
A
Pulsed Forward Diode Current
Repetitive avalanche energy L=50uH TC=25C Power Dissipation B Power Dissipation
A
mJ W W C
TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case
B
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 14.2 39 2.5
Max 20 50 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=25V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=30A IS=1A, VGS=0V TJ=125C 1 120 5.7 8.6 11 50 0.7 1 55 990 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 210 125 1.1 18 VGS=10V, VDS=12.5V, ID=30A 9 3 4.5 VGS=10V, VDS=12.5V, RL=0.42, RGEN=3 IF=30A, dI/dt=500A/s 8.5 13 1180 275 175 1.7 21.7 11 4 6.4 6.8 13.8 21.5 8.7 10.6 16 13 19 1450 350 245 2.5 26 13 5 9 7 10.5 14 2 Min 25 10 50 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 1 : Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 6V 80 4.5V 7V 60 ID (A) 4V 40 VGS=3.5V ID(A) 60 80 5V 100 VDS=5V
40 125C 25C
20
20
0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 18 Normalized On-Resistance 16 14 RDS(ON) (m ) 12 10 8 6 4 2 0 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 VGS=10V VGS=4.5V
0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics
2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 VGS=10V ID=30A
17 5 2 10 VGS=4.5V
ID=20A
0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature
1.0E+02
30 ID=30A 25 20 RDS(ON) (m ) 15 10 25C 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C IS (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C
40
25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=12.5V ID=30A Capacitance (pF) 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 25 0 0 Crss 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Ciss
8
VGS (Volts)
6
4
2
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s
200 160 Power (W) 120 80 40 0 0.0001
10s 100s
RDS(ON) limited DC
TJ(Max)=150C TC=25C
1ms 10ms
TJ(Max)=150C TC=25C
17 5 2 10
0.1
1 VDS (Volts)
10
100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Z JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 1
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 ID(A), Peak Avalanche Current 60 50 40 30 20 10 0 0.000001 TA=150C TA=125C TA=100C TA=25C Power Dissipation (W) 60 50 40 30 20 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
50
10000
TA=25C
40 Current rating ID(A) Power (W)
1000
30
100
20
17 5 2 10
10
10
0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
1 0 0 0 0.01 0.1 1 10 100 0 1000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
0.01
PD Single Pulse Ton T 100 1000
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 Qrr (nC) 25C 15 10 5 0 0 5 10 15 20 25 30 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 Is=20A 20 15 10 5 0 0 Irm 200 400 600 800 Qrr 25C 125C 8 6 4 2 0 1000 12 9 6 3 0 0 200 400 600 800 125 S 25C 25C 0.5 0 1000 10 15 Is=20A 125C trr Qrr (nC) trr (ns) Irm (A) 25C 1.5 1 S di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt 2 Qrr Irm 125C 25C 6 4 2 0 di/dt=800A/us 125C 12 10 8 Irm (A) 16 14 12 10 trr (ns) 8 6 4 2 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2.5 S 25C 2 trr di/dt=800A/us 125C 3 2.5
125C 1 0.5 0
125
di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
25C
1.5
AOD4140
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

▲Up To Search▲

Price & Availability of AOD4140

	To Download AOD4140 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .